Shallow (≲100 Å) antimony ion implantation on n-type silicon is shown to reduce the effective barrier height on Al Schottky diodes formed on the implanted surface irrespective of postimplant annealing. The mechanisms of barrier reduction are quite different in the two cases. In the postimplant annealed case, the antimony is activated resulting in barrier height reduction due to the surface N+ dopant charge, while in the unannealed case, lattice damage causes barrier height reduction as observed earlier for ion etched silicon surfaces.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)