The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×101 1 cm-2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on Si surface barriers.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)