Effect of argon ion implantation dose on silicon Schottky barrier characteristics

S. Ashok, H. Kräutle, H. Beneking

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Abstract

The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×101 1 cm-2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on Si surface barriers.

Original languageEnglish (US)
Pages (from-to)431-433
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number4
DOIs
StatePublished - Dec 1 1984

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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