Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

Patrick M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.

Original languageEnglish (US)
Pages (from-to)542-544
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number6
DOIs
StatePublished - Dec 1 1982

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silicon dioxide
defects
silicon
radiation
electron paramagnetic resonance
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface. / Lenahan, Patrick M.; Dressendorfer, P. V.

In: Applied Physics Letters, Vol. 41, No. 6, 01.12.1982, p. 542-544.

Research output: Contribution to journalArticle

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