Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

P. M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticlepeer-review

105 Scopus citations

Abstract

Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.

Original languageEnglish (US)
Pages (from-to)542-544
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number6
DOIs
StatePublished - 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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