Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells

Haoting Shen, Yu Yuwen, Xin Wang, J. Israel Ramirez, Yuanyuan V. Li, Yue Ke, Chito E. Kendrick, Nikolas J. Podraza, Thomas Nelson Jackson, Elizabeth C. Dickey, Theresa S. Mayer, Joan Marie Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 ° C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (V oc >0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm -3 ), the short-circuit current density (J sc ) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2466-2469
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Heterojunctions
Solar cells
Solar cell arrays
Doping (additives)
Crystals
Open circuit voltage
Plasma enhanced chemical vapor deposition
Energy conversion
Short circuit currents
Conversion efficiency
Current density
Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Shen, H., Yuwen, Y., Wang, X., Ramirez, J. I., Li, Y. V., Ke, Y., ... Redwing, J. M. (2013). Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2466-2469). [6744975] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744975
Shen, Haoting ; Yuwen, Yu ; Wang, Xin ; Ramirez, J. Israel ; Li, Yuanyuan V. ; Ke, Yue ; Kendrick, Chito E. ; Podraza, Nikolas J. ; Jackson, Thomas Nelson ; Dickey, Elizabeth C. ; Mayer, Theresa S. ; Redwing, Joan Marie. / Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2466-2469 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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abstract = "Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 ° C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (V oc >0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm -3 ), the short-circuit current density (J sc ) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.",
author = "Haoting Shen and Yu Yuwen and Xin Wang and Ramirez, {J. Israel} and Li, {Yuanyuan V.} and Yue Ke and Kendrick, {Chito E.} and Podraza, {Nikolas J.} and Jackson, {Thomas Nelson} and Dickey, {Elizabeth C.} and Mayer, {Theresa S.} and Redwing, {Joan Marie}",
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Shen, H, Yuwen, Y, Wang, X, Ramirez, JI, Li, YV, Ke, Y, Kendrick, CE, Podraza, NJ, Jackson, TN, Dickey, EC, Mayer, TS & Redwing, JM 2013, Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744975, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2466-2469, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744975

Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. / Shen, Haoting; Yuwen, Yu; Wang, Xin; Ramirez, J. Israel; Li, Yuanyuan V.; Ke, Yue; Kendrick, Chito E.; Podraza, Nikolas J.; Jackson, Thomas Nelson; Dickey, Elizabeth C.; Mayer, Theresa S.; Redwing, Joan Marie.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2466-2469 6744975 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

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AU - Shen, Haoting

AU - Yuwen, Yu

AU - Wang, Xin

AU - Ramirez, J. Israel

AU - Li, Yuanyuan V.

AU - Ke, Yue

AU - Kendrick, Chito E.

AU - Podraza, Nikolas J.

AU - Jackson, Thomas Nelson

AU - Dickey, Elizabeth C.

AU - Mayer, Theresa S.

AU - Redwing, Joan Marie

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N2 - Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 ° C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (V oc >0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm -3 ), the short-circuit current density (J sc ) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.

AB - Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 ° C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (V oc >0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm -3 ), the short-circuit current density (J sc ) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.

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BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

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Shen H, Yuwen Y, Wang X, Ramirez JI, Li YV, Ke Y et al. Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2466-2469. 6744975. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6744975