Growth of thermal oxide on silicon implanted with carbon at low energies is studied and electrical characteristics of the resulting SiO2-Si structures are evaluated. After excluding the effect of surface damage on the oxide growth kinetics, it was determined that for the carbon implant doses up to 1014 cm-2 the effect on oxide growth kinetics is limited. At higher carbon doses significant retardation of oxide growth was observed. A clear correlation between carbon dose and electrical characteristics of SiO2-Si structures has also been established. In the case of each parameter of concern in this study its degrActation with increased carbon dose above 1014cm-2, which corresponds to carbon concentration in silicon of the order of 1019 cm3, was observed. These effects may come to play during thermal oxidation of silicon wafers subjected prior to oxidation to the reactive ion etching in carbon containing gases such as CF4, CHF3, and others.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry