Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures

R. B. Beck, T. Brozek, Jerzy Ruzyllo, S. D. Hossain, R. E. Tressler

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Growth of thermal oxide on silicon implanted with carbon at low energies is studied and electrical characteristics of the resulting SiO2-Si structures are evaluated. After excluding the effect of surface damage on the oxide growth kinetics, it was determined that for the carbon implant doses up to 1014 cm-2 the effect on oxide growth kinetics is limited. At higher carbon doses significant retardation of oxide growth was observed. A clear correlation between carbon dose and electrical characteristics of SiO2-Si structures has also been established. In the case of each parameter of concern in this study its degrActation with increased carbon dose above 1014cm-2, which corresponds to carbon concentration in silicon of the order of 1019 cm3, was observed. These effects may come to play during thermal oxidation of silicon wafers subjected prior to oxidation to the reactive ion etching in carbon containing gases such as CF4, CHF3, and others.

Original languageEnglish (US)
Pages (from-to)689-694
Number of pages6
JournalJournal of Electronic Materials
Volume22
Issue number6
DOIs
StatePublished - Jun 1 1993

Fingerprint

Silicon
Electric properties
Carbon
electrical properties
Oxidation
oxidation
carbon
silicon
Oxides
dosage
oxides
Growth kinetics
Reactive ion etching
kinetics
Hot Temperature
Silicon wafers
Gases
etching
wafers
damage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Beck, R. B. ; Brozek, T. ; Ruzyllo, Jerzy ; Hossain, S. D. ; Tressler, R. E. / Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures. In: Journal of Electronic Materials. 1993 ; Vol. 22, No. 6. pp. 689-694.
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Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures. / Beck, R. B.; Brozek, T.; Ruzyllo, Jerzy; Hossain, S. D.; Tressler, R. E.

In: Journal of Electronic Materials, Vol. 22, No. 6, 01.06.1993, p. 689-694.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures

AU - Beck, R. B.

AU - Brozek, T.

AU - Ruzyllo, Jerzy

AU - Hossain, S. D.

AU - Tressler, R. E.

PY - 1993/6/1

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N2 - Growth of thermal oxide on silicon implanted with carbon at low energies is studied and electrical characteristics of the resulting SiO2-Si structures are evaluated. After excluding the effect of surface damage on the oxide growth kinetics, it was determined that for the carbon implant doses up to 1014 cm-2 the effect on oxide growth kinetics is limited. At higher carbon doses significant retardation of oxide growth was observed. A clear correlation between carbon dose and electrical characteristics of SiO2-Si structures has also been established. In the case of each parameter of concern in this study its degrActation with increased carbon dose above 1014cm-2, which corresponds to carbon concentration in silicon of the order of 1019 cm3, was observed. These effects may come to play during thermal oxidation of silicon wafers subjected prior to oxidation to the reactive ion etching in carbon containing gases such as CF4, CHF3, and others.

AB - Growth of thermal oxide on silicon implanted with carbon at low energies is studied and electrical characteristics of the resulting SiO2-Si structures are evaluated. After excluding the effect of surface damage on the oxide growth kinetics, it was determined that for the carbon implant doses up to 1014 cm-2 the effect on oxide growth kinetics is limited. At higher carbon doses significant retardation of oxide growth was observed. A clear correlation between carbon dose and electrical characteristics of SiO2-Si structures has also been established. In the case of each parameter of concern in this study its degrActation with increased carbon dose above 1014cm-2, which corresponds to carbon concentration in silicon of the order of 1019 cm3, was observed. These effects may come to play during thermal oxidation of silicon wafers subjected prior to oxidation to the reactive ion etching in carbon containing gases such as CF4, CHF3, and others.

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