Effect of diborane on the microstructure of boron-doped silicon nanowires

Ling Pan, Kok Keong Lew, Joan M. Redwing, Elizabeth C. Dickey

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

Boron-doped silicon (Si) nanowires, with nominal diameters of 80 nm, were grown via the vapor-liquid-solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH4) and diborane (B2H6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B2H6 partial pressure and thus lower doping levels (≤1×1018 cm-3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B 2H6 partial pressure (∼2×1019 cm -3 doping level), the majority of the wires exhibited a core-shell structure with an amorphous Si shell (20-30 nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B2H6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth.

Original languageEnglish (US)
Pages (from-to)428-436
Number of pages9
JournalJournal of Crystal Growth
Volume277
Issue number1-4
DOIs
StatePublished - Apr 15 2005

Fingerprint

diborane
Boron
Silicon
Nanowires
boron
nanowires
microstructure
Microstructure
silicon
Partial pressure
partial pressure
Doping (additives)
Cable cores
Silanes
Electron energy loss spectroscopy
Liquids
liquid-solid interfaces
Amorphous silicon
silanes
Gold

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Pan, Ling ; Lew, Kok Keong ; Redwing, Joan M. ; Dickey, Elizabeth C. / Effect of diborane on the microstructure of boron-doped silicon nanowires. In: Journal of Crystal Growth. 2005 ; Vol. 277, No. 1-4. pp. 428-436.
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Effect of diborane on the microstructure of boron-doped silicon nanowires. / Pan, Ling; Lew, Kok Keong; Redwing, Joan M.; Dickey, Elizabeth C.

In: Journal of Crystal Growth, Vol. 277, No. 1-4, 15.04.2005, p. 428-436.

Research output: Contribution to journalArticle

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