Abstract
Boron-doped silicon (Si) nanowires, with nominal diameters of 80 nm, were grown via the vapor-liquid-solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH4) and diborane (B2H6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B2H6 partial pressure and thus lower doping levels (≤1×1018 cm-3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B 2H6 partial pressure (∼2×1019 cm -3 doping level), the majority of the wires exhibited a core-shell structure with an amorphous Si shell (20-30 nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B2H6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 428-436 |
| Number of pages | 9 |
| Journal | Journal of Crystal Growth |
| Volume | 277 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Apr 15 2005 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Effect of diborane on the microstructure of boron-doped silicon nanowires. / Pan, Ling; Lew, Kok Keong; Redwing, Joan M.; Dickey, Elizabeth C.
In: Journal of Crystal Growth, Vol. 277, No. 1-4, 15.04.2005, p. 428-436.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of diborane on the microstructure of boron-doped silicon nanowires
AU - Pan, Ling
AU - Lew, Kok Keong
AU - Redwing, Joan M.
AU - Dickey, Elizabeth C.
PY - 2005/4/15
Y1 - 2005/4/15
N2 - Boron-doped silicon (Si) nanowires, with nominal diameters of 80 nm, were grown via the vapor-liquid-solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH4) and diborane (B2H6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B2H6 partial pressure and thus lower doping levels (≤1×1018 cm-3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B 2H6 partial pressure (∼2×1019 cm -3 doping level), the majority of the wires exhibited a core-shell structure with an amorphous Si shell (20-30 nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B2H6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth.
AB - Boron-doped silicon (Si) nanowires, with nominal diameters of 80 nm, were grown via the vapor-liquid-solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH4) and diborane (B2H6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B2H6 partial pressure and thus lower doping levels (≤1×1018 cm-3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B 2H6 partial pressure (∼2×1019 cm -3 doping level), the majority of the wires exhibited a core-shell structure with an amorphous Si shell (20-30 nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B2H6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth.
UR - http://www.scopus.com/inward/record.url?scp=15844364599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=15844364599&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2005.01.091
DO - 10.1016/j.jcrysgro.2005.01.091
M3 - Article
AN - SCOPUS:15844364599
VL - 277
SP - 428
EP - 436
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -