Effect of ferroelastic twin walls on local polarization switching

Phase-field modeling

S. Choudhury, J. X. Zhang, Y. L. Li, Long-qing Chen, Q. X. Jia, S. V. Kalinin

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects.

Original languageEnglish (US)
Article number162901
JournalApplied Physics Letters
Volume93
Issue number16
DOIs
StatePublished - Nov 3 2008

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nucleation
polarization
domain wall
defects
electric potential
thin films
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Choudhury, S. ; Zhang, J. X. ; Li, Y. L. ; Chen, Long-qing ; Jia, Q. X. ; Kalinin, S. V. / Effect of ferroelastic twin walls on local polarization switching : Phase-field modeling. In: Applied Physics Letters. 2008 ; Vol. 93, No. 16.
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Effect of ferroelastic twin walls on local polarization switching : Phase-field modeling. / Choudhury, S.; Zhang, J. X.; Li, Y. L.; Chen, Long-qing; Jia, Q. X.; Kalinin, S. V.

In: Applied Physics Letters, Vol. 93, No. 16, 162901, 03.11.2008.

Research output: Contribution to journalArticle

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AU - Zhang, J. X.

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AU - Jia, Q. X.

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