Effect of ferroelastic twin walls on local polarization switching: Phase-field modeling

S. Choudhury, J. X. Zhang, Y. L. Li, L. Q. Chen, Q. X. Jia, S. V. Kalinin

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Abstract

Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects.

Original languageEnglish (US)
Article number162901
JournalApplied Physics Letters
Volume93
Issue number16
DOIs
StatePublished - Nov 3 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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