Effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by vapor-liquid-solid growth

Kok Keong Lew, Ling Pan, Elizabeth C. Dickey, Joan Marie Redwing

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

The effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by the vapor-liquid-solid method using gaseous precursors (SiH4, and GeH4) was investigated. Transmission electron microscopy was used to characterize the structural properties and elemental composition of the nanowires. At higher growth temperatures (>425°C), Ge thin film deposition on the nanowire surface resulted in Au loss during growth and the formation of tapered structures. By simultaneously reducing the growth temperature from 425 to 325 °C to suppress the rate of Ge film deposition and increasing the GeH4/(GeH4 + SiH4) gas ratio, Si1-xGex nanowires were produced with Ge fractions spanning the entire composition range. The Ge fraction follows that predicted from the elemental nanowire growth rates in the Ge-rich (x > 0.5) regime, but deviates to higher Ge fractions in Si-rich (x < 0.5) nanowires. A mechanism was proposed whereby surface diffusion provides an additional pathway to Ge incorporation in Si-rich Si1-xGex. nanowires.

Original languageEnglish (US)
Pages (from-to)2876-2881
Number of pages6
JournalJournal of Materials Research
Volume21
Issue number11
DOIs
StatePublished - Nov 1 2006

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Nanowires
nanowires
Vapors
vapors
Liquids
liquids
Chemical analysis
Growth temperature
Surface diffusion
surface diffusion
Structural properties
Gases
Transmission electron microscopy
Thin films
transmission electron microscopy
temperature
thin films
gases

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by vapor-liquid-solid growth",
abstract = "The effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by the vapor-liquid-solid method using gaseous precursors (SiH4, and GeH4) was investigated. Transmission electron microscopy was used to characterize the structural properties and elemental composition of the nanowires. At higher growth temperatures (>425°C), Ge thin film deposition on the nanowire surface resulted in Au loss during growth and the formation of tapered structures. By simultaneously reducing the growth temperature from 425 to 325 °C to suppress the rate of Ge film deposition and increasing the GeH4/(GeH4 + SiH4) gas ratio, Si1-xGex nanowires were produced with Ge fractions spanning the entire composition range. The Ge fraction follows that predicted from the elemental nanowire growth rates in the Ge-rich (x > 0.5) regime, but deviates to higher Ge fractions in Si-rich (x < 0.5) nanowires. A mechanism was proposed whereby surface diffusion provides an additional pathway to Ge incorporation in Si-rich Si1-xGex. nanowires.",
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Effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by vapor-liquid-solid growth. / Lew, Kok Keong; Pan, Ling; Dickey, Elizabeth C.; Redwing, Joan Marie.

In: Journal of Materials Research, Vol. 21, No. 11, 01.11.2006, p. 2876-2881.

Research output: Contribution to journalArticle

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