Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

R. Dietrich, A. Vescan, A. Wieszt, H. Leier, K. S. Boutros, Joan Marie Redwing, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.

Original languageEnglish (US)
Pages (from-to)209-212
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
StatePublished - Nov 1 1999
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: Jul 4 1999Jul 9 1999

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Drain current
Carrier mobility
Field effect transistors
Relaxation time
field effect transistors
Activation energy
Lighting
illumination
Electric potential
carrier mobility
absorption cross sections
relaxation time
activation energy
Temperature
temperature dependence
electric potential
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Dietrich, R. ; Vescan, A. ; Wieszt, A. ; Leier, H. ; Boutros, K. S. ; Redwing, Joan Marie ; Kornitzer, K. ; Freitag, R. ; Ebner, T. ; Thonke, K. / Effect of illumination on the electrical characteristics of AlGaN/GaN FETs. In: Physica Status Solidi (A) Applied Research. 1999 ; Vol. 176, No. 1. pp. 209-212.
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author = "R. Dietrich and A. Vescan and A. Wieszt and H. Leier and Boutros, {K. S.} and Redwing, {Joan Marie} and K. Kornitzer and R. Freitag and T. Ebner and K. Thonke",
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Dietrich, R, Vescan, A, Wieszt, A, Leier, H, Boutros, KS, Redwing, JM, Kornitzer, K, Freitag, R, Ebner, T & Thonke, K 1999, 'Effect of illumination on the electrical characteristics of AlGaN/GaN FETs', Physica Status Solidi (A) Applied Research, vol. 176, no. 1, pp. 209-212. https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q

Effect of illumination on the electrical characteristics of AlGaN/GaN FETs. / Dietrich, R.; Vescan, A.; Wieszt, A.; Leier, H.; Boutros, K. S.; Redwing, Joan Marie; Kornitzer, K.; Freitag, R.; Ebner, T.; Thonke, K.

In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 01.11.1999, p. 209-212.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

AU - Dietrich, R.

AU - Vescan, A.

AU - Wieszt, A.

AU - Leier, H.

AU - Boutros, K. S.

AU - Redwing, Joan Marie

AU - Kornitzer, K.

AU - Freitag, R.

AU - Ebner, T.

AU - Thonke, K.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.

AB - Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.

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