Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

R. Dietrich, A. Vescan, A. Wieszt, H. Leier, K. S. Boutros, Joan Marie Redwing, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations


Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.

Original languageEnglish (US)
Pages (from-to)209-212
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Issue number1
StatePublished - Nov 1 1999
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: Jul 4 1999Jul 9 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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