Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy

Y. Ren, M. Micovic, W. Z. Cai, S. Mohney, S. M. Lord, D. L. Miller, T. S. Mayer

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Fingerprint

Dive into the research topics of 'Effect of in situ annealing on highly-mismatched In<sub>0.75</sub>Ga<sub>0.25</sub>As on InP grown using molecular beam epitaxy'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy