Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film - A phase-field model

S. Y. Hu, Y. L. Li, L. Q. Chen

Research output: Contribution to journalArticle

61 Scopus citations

Abstract

A phase-field model was developed for predicting domain structure evolution in a ferroelectric thin film. The micromechanical concept of eigenstrain was employed to describe the discontinuous displacement within dislocation loops on slip planes. The effect of interfacial dislocations on ferroelectric domain nucleation and growth was simulated.

Original languageEnglish (US)
Pages (from-to)2542-2547
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
StatePublished - Aug 15 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film - A phase-field model'. Together they form a unique fingerprint.

  • Cite this