A phase-field model was developed for predicting domain structure evolution in a ferroelectric thin film. The micromechanical concept of eigenstrain was employed to describe the discontinuous displacement within dislocation loops on slip planes. The effect of interfacial dislocations on ferroelectric domain nucleation and growth was simulated.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Applied Physics|
|State||Published - Aug 15 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)