Effect of ion-beam sputter damage on Schottky barrier formation in silicon

Stephen J. Fonash, S. Ashok, Ranbir Singh

Research output: Contribution to journalArticlepeer-review

119 Scopus citations

Abstract

Abnormal rectifying behavior has been observed in molybdenum/silicon Schottky barrier diodes produced by ion-beam sputter deposition of Mo on single-crystal Si. Rectifying, rather than ohmic contacts are obtained on p-type Si, while ohmic behavior is seen on n-type Si. These results are contrary to the usual results reported in the literature, and are shown to be caused by ion-beam surface damage of Si. The damage does not simply cause a surface layer of high-recombination velocity, but rather tends to bend the Si band edges downwards, irrespective of the Si conductivity type.

Original languageEnglish (US)
Pages (from-to)423-425
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number5
DOIs
StatePublished - 1981

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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