Effect of low energy Ar+ ion implantation on silicon surface barriers

S. Ashok, H. Kräutle, H. Beneking, A. Mogro-Campero

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Abstract

The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low energy (10 keV) Ar+ implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×1011 cm-2, well below the amorphization threshold dose for silicon. In conjunction with the ion energy threshold established earlier for silicon surface damage effects (about 25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on silicon surface barriers.

Original languageEnglish (US)
Pages (from-to)251-256
Number of pages6
JournalThin Solid Films
Volume126
Issue number3-4
DOIs
Publication statusPublished - Apr 26 1985

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ashok, S., Kräutle, H., Beneking, H., & Mogro-Campero, A. (1985). Effect of low energy Ar+ ion implantation on silicon surface barriers. Thin Solid Films, 126(3-4), 251-256. https://doi.org/10.1016/0040-6090(85)90318-9