Effect of mass and incidence angle of keV energy polyatomic projectiles in silicon sputtering

M. Medvedeva, I. Wojciechowski, B. J. Garrison

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Recent experiments of bombardment of silicon targets show that keV energy polyatomic projectiles can greatly increase both the total yield and the secondary silicon ion emission, especially complex secondary ions. This effect is more pronounced for the heavy polyatomic projectiles than for light ones. To understand why the heavy projectiles increase the non-linear enhancement of the yields, molecular dynamics simulations of the bombardment of a Si(1 0 0)-(2 × 1) surface by Aln (n = 1, 2) and Aun (n = 1, 2) projectiles with E0 = 1.5 keV/atom at the incident angles of θ = 0° and θ = 45° have been carried out. It is shown that oblique bombardment by heavy dimer projectiles at this initial energy leads to an increase of the number of trajectories with a very high yield of ejected atoms. A microscopic analysis of the events is given and also the influence of the high yield events on the energy distributions of the sputtered silicon atoms is described.

Original languageEnglish (US)
Pages (from-to)349-357
Number of pages9
JournalSurface Science
Volume505
DOIs
StatePublished - May 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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