Effect of minority carrier injection on lateral current in MIS tunnel structures

Jerzy Ruzyllo, K. Kucharski, A. Jakubowski

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this work it is shown that the MIS structure with an ultra-thin (20 Å < xi < 40 Å) oxide is distinguished by a unique mechanism of lateral conduction. The flow of the lateral current between the two metal electrodes formed on the surface of an ultra-thin silicon dioxide is found to take place through the silicon substrate and the two non-equilibrium MIS tunnel diodes formed by the metal electrodes, the ultra-thin oxide, and the silicon. One of these diodes is forward biased and the other reverse biased. It is shown that the main limitation to the lateral current comes from the reverse biased diode. A structure is proposed in which such a lateral current can be efficiently controlled by the injection of minority carriers from the gate of an appropriately formed, conventional MIS tunnel diode into the depletion region of the reverse biased diode, so limiting the lateral current. Various physical phenomena related to this effect are studied and discussed. The MIS lateral tunnel structure considered in this work was fabricated in order to investigate the influence of minority carrier injection on the lateral conduction in MIS tunnel devices. However, the ideas proposed in this work can be developed into useful device structures.

Original languageEnglish (US)
Pages (from-to)1041-1045
Number of pages5
JournalSolid-State Electronics
Volume23
Issue number10
DOIs
StatePublished - Jan 1 1980

Fingerprint

carrier injection
Management information systems
MIS (semiconductors)
minority carriers
tunnels
Tunnels
Tunnel diodes
tunnel diodes
Diodes
diodes
Silicon
Oxides
Metals
conduction
Electrodes
electrodes
oxides
silicon
Silicon Dioxide
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ruzyllo, Jerzy ; Kucharski, K. ; Jakubowski, A. / Effect of minority carrier injection on lateral current in MIS tunnel structures. In: Solid-State Electronics. 1980 ; Vol. 23, No. 10. pp. 1041-1045.
@article{f9fa4e741fce4f05880e80bfbf89bff2,
title = "Effect of minority carrier injection on lateral current in MIS tunnel structures",
abstract = "In this work it is shown that the MIS structure with an ultra-thin (20 {\AA} < xi < 40 {\AA}) oxide is distinguished by a unique mechanism of lateral conduction. The flow of the lateral current between the two metal electrodes formed on the surface of an ultra-thin silicon dioxide is found to take place through the silicon substrate and the two non-equilibrium MIS tunnel diodes formed by the metal electrodes, the ultra-thin oxide, and the silicon. One of these diodes is forward biased and the other reverse biased. It is shown that the main limitation to the lateral current comes from the reverse biased diode. A structure is proposed in which such a lateral current can be efficiently controlled by the injection of minority carriers from the gate of an appropriately formed, conventional MIS tunnel diode into the depletion region of the reverse biased diode, so limiting the lateral current. Various physical phenomena related to this effect are studied and discussed. The MIS lateral tunnel structure considered in this work was fabricated in order to investigate the influence of minority carrier injection on the lateral conduction in MIS tunnel devices. However, the ideas proposed in this work can be developed into useful device structures.",
author = "Jerzy Ruzyllo and K. Kucharski and A. Jakubowski",
year = "1980",
month = "1",
day = "1",
doi = "10.1016/0038-1101(80)90182-3",
language = "English (US)",
volume = "23",
pages = "1041--1045",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",

}

Effect of minority carrier injection on lateral current in MIS tunnel structures. / Ruzyllo, Jerzy; Kucharski, K.; Jakubowski, A.

In: Solid-State Electronics, Vol. 23, No. 10, 01.01.1980, p. 1041-1045.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of minority carrier injection on lateral current in MIS tunnel structures

AU - Ruzyllo, Jerzy

AU - Kucharski, K.

AU - Jakubowski, A.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - In this work it is shown that the MIS structure with an ultra-thin (20 Å < xi < 40 Å) oxide is distinguished by a unique mechanism of lateral conduction. The flow of the lateral current between the two metal electrodes formed on the surface of an ultra-thin silicon dioxide is found to take place through the silicon substrate and the two non-equilibrium MIS tunnel diodes formed by the metal electrodes, the ultra-thin oxide, and the silicon. One of these diodes is forward biased and the other reverse biased. It is shown that the main limitation to the lateral current comes from the reverse biased diode. A structure is proposed in which such a lateral current can be efficiently controlled by the injection of minority carriers from the gate of an appropriately formed, conventional MIS tunnel diode into the depletion region of the reverse biased diode, so limiting the lateral current. Various physical phenomena related to this effect are studied and discussed. The MIS lateral tunnel structure considered in this work was fabricated in order to investigate the influence of minority carrier injection on the lateral conduction in MIS tunnel devices. However, the ideas proposed in this work can be developed into useful device structures.

AB - In this work it is shown that the MIS structure with an ultra-thin (20 Å < xi < 40 Å) oxide is distinguished by a unique mechanism of lateral conduction. The flow of the lateral current between the two metal electrodes formed on the surface of an ultra-thin silicon dioxide is found to take place through the silicon substrate and the two non-equilibrium MIS tunnel diodes formed by the metal electrodes, the ultra-thin oxide, and the silicon. One of these diodes is forward biased and the other reverse biased. It is shown that the main limitation to the lateral current comes from the reverse biased diode. A structure is proposed in which such a lateral current can be efficiently controlled by the injection of minority carriers from the gate of an appropriately formed, conventional MIS tunnel diode into the depletion region of the reverse biased diode, so limiting the lateral current. Various physical phenomena related to this effect are studied and discussed. The MIS lateral tunnel structure considered in this work was fabricated in order to investigate the influence of minority carrier injection on the lateral conduction in MIS tunnel devices. However, the ideas proposed in this work can be developed into useful device structures.

UR - http://www.scopus.com/inward/record.url?scp=0019068578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019068578&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(80)90182-3

DO - 10.1016/0038-1101(80)90182-3

M3 - Article

AN - SCOPUS:0019068578

VL - 23

SP - 1041

EP - 1045

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 10

ER -