Effect of Mn-doping on dielectric relaxation behavior of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric ceramics

Xudong Qi, Enwei Sun, Rui Zhang, Bin Yang, Shiyang Li, Wenwu Cao

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15 Scopus citations

Abstract

The phase transition characteristics, dielectric relaxation behavior, and ferroelectric hysteresis in undoped and Mn-doped 0.24Pb(In1/2Nb1/2)O3-0.42Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 (24PIN-42PMN-34PT) ternary ceramics have been investigated. The degree of diffuse phase transition (DPT) is enhanced by the addition of manganese due to the disorder-enhanced structure. The temperature dependence of the dielectric permittivity can be well described by the Lorentz-type quadratic relationship at the temperature range of Tm-600 K and Curie-Weiss law at T > 630 K, respectively. In addition, the frequency dispersion of dielectric permittivity is greatly suppressed and hysteresis loops are pinched at room temperature, which is attributed to the internal bias field created by the defect dipoles after introducing Mn ion.

Original languageEnglish (US)
Pages (from-to)16819-16826
Number of pages8
JournalCeramics International
Volume43
Issue number18
DOIs
StatePublished - Dec 15 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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