Anomalous rectifying behavior of metal-semiconductor diodes formed by ion beam etching and/or ion beam deposition is presented. A model is proposed, to explain the characteristics of these devices, in terms of sputter-induced damage at the surface which leads to a buried barrier in p-Si but causes the metal-n-Si barrier to be transparent to carrier flow. These results are also compared with results obtained in compound semiconductors subjected to similar treatment.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry