Effect of neutral ion beam sputtering and etching on silicon

Stephen J. Fonash, S. Ashok, Ranbir Singh

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Anomalous rectifying behavior of metal-semiconductor diodes formed by ion beam etching and/or ion beam deposition is presented. A model is proposed, to explain the characteristics of these devices, in terms of sputter-induced damage at the surface which leads to a buried barrier in p-Si but causes the metal-n-Si barrier to be transparent to carrier flow. These results are also compared with results obtained in compound semiconductors subjected to similar treatment.

Original languageEnglish (US)
Pages (from-to)231-235
Number of pages5
JournalThin Solid Films
Volume90
Issue number3
DOIs
StatePublished - Apr 23 1982

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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