Effect of nitridation on the reliability of thick gate oxides

C. T. Wu; A. Mieckowski; R. S. Ridley; G. Dolny; T. Grebs; J. Linn; J. Ruzyllo

doi:10.1016/S0026-2714(02)00122-1

Effect of nitridation on the reliability of thick gate oxides

C. T. Wu, A. Mieckowski, R. S. Ridley, G. Dolny, T. Grebs, J. Linn, J. Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N₂O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N₂O nitridation piles up in the oxide at the Si-SiO₂ interface regardless of nitridation time. The results obtained show improved breakdown field (E_bd), and charge-to-breakdown (Q_bd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (D_it) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.

Original language	English (US)
Pages (from-to)	43-47
Number of pages	5
Journal	Microelectronics Reliability
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/S0026-2714(02)00122-1
State	Published - Jan 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(02)00122-1

Cite this

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title = "Effect of nitridation on the reliability of thick gate oxides",

abstract = "In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N2O nitridation piles up in the oxide at the Si-SiO2 interface regardless of nitridation time. The results obtained show improved breakdown field (Ebd), and charge-to-breakdown (Qbd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (Dit) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.",

author = "Wu, {C. T.} and A. Mieckowski and Ridley, {R. S.} and G. Dolny and T. Grebs and J. Linn and J. Ruzyllo",

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T1 - Effect of nitridation on the reliability of thick gate oxides

AU - Wu, C. T.

AU - Mieckowski, A.

AU - Ridley, R. S.

AU - Dolny, G.

AU - Grebs, T.

AU - Linn, J.

AU - Ruzyllo, J.

PY - 2003/1

Y1 - 2003/1

N2 - In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N2O nitridation piles up in the oxide at the Si-SiO2 interface regardless of nitridation time. The results obtained show improved breakdown field (Ebd), and charge-to-breakdown (Qbd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (Dit) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.

AB - In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N2O nitridation piles up in the oxide at the Si-SiO2 interface regardless of nitridation time. The results obtained show improved breakdown field (Ebd), and charge-to-breakdown (Qbd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (Dit) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.

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JO - Microelectronics and Reliability

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Effect of nitridation on the reliability of thick gate oxides

Abstract

All Science Journal Classification (ASJC) codes

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