In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N2O nitridation piles up in the oxide at the Si-SiO2 interface regardless of nitridation time. The results obtained show improved breakdown field (Ebd), and charge-to-breakdown (Qbd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (Dit) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering