Effect of nitridation on the reliability of thick gate oxides

C. T. Wu, A. Mieckowski, R. S. Ridley, G. Dolny, T. Grebs, J. Linn, J. Ruzyllo

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Abstract

In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N2O nitridation piles up in the oxide at the Si-SiO2 interface regardless of nitridation time. The results obtained show improved breakdown field (Ebd), and charge-to-breakdown (Qbd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (Dit) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.

Original languageEnglish (US)
Pages (from-to)43-47
Number of pages5
JournalMicroelectronics Reliability
Volume43
Issue number1
DOIs
StatePublished - Jan 1 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Wu, C. T., Mieckowski, A., Ridley, R. S., Dolny, G., Grebs, T., Linn, J., & Ruzyllo, J. (2003). Effect of nitridation on the reliability of thick gate oxides. Microelectronics Reliability, 43(1), 43-47. https://doi.org/10.1016/S0026-2714(02)00122-1