Effect of Oxygen Vacancy on Electrical Property of Acceptor Doped BaTiO3–Na0.5Bi0.5TiO3–Nb2O5X8R Systems

Yue Sun, Hanxing Liu, Hua Hao, Shujun Zhang

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32 Scopus citations


In this study, we reported a new BaTiO3–Na0.5Bi0.5TiO3–Nb2O5–Mn2O3/Fe2O3/Co3O4/In2O3X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy ((Formula presented.)) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on the (Formula presented.) concentration, which can be confirmed by the dielectric behavior and A1goctahedral breathing modes in Raman spectrum. In addition, the activation energy of (Formula presented.) diffusion is greatly reduced with the increase in (Formula presented.) concentration. It was found that the remnant polarization and coercive field were both decreased with increasing (Formula presented.) concentration, due to the facilitated defect dipoles reorientation and domain switching.

Original languageEnglish (US)
Pages (from-to)3067-3073
Number of pages7
JournalJournal of the American Ceramic Society
Issue number9
StatePublished - Sep 1 2016

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry


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