Effect of phonon self-energy correction on hot-electron relaxation in two-dimensional semiconductor systems

S. Das Sarma, J. K. Jain, R. Jalabert

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33 Scopus citations

Abstract

We study the phenomenon of hot-carrier relaxation via LO-phonon emission in two-dimensional semiconductor quantum wells. Calculations are done for a model in which the hot-electron gas is described by a temperature T, which is higher than the lattice temperature. In addition to including the usual dynamical screening and hot-phonon effect, we also include a phonon self-energy correction due to its coupling with the electron gas in the plasmon-pole approximation. This leads to a large enhancement of the power loss at low temperatures for low-density samples. The numerical results are in good agreement with the available experimental results.

Original languageEnglish (US)
Pages (from-to)4560-4566
Number of pages7
JournalPhysical Review B
Volume37
Issue number9
DOIs
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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