Effect of polarity on Ni/InN interfacial reactions

K. C. Kragh-Buetow, X. Weng, E. D. Readinger, M. Wraback, Suzanne E. Mohney

Research output: Contribution to journalArticle

Abstract

Ni films on (0001) and (000 1 ̄) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

Original languageEnglish (US)
Article number021607
JournalApplied Physics Letters
Volume102
Issue number2
DOIs
StatePublished - Jan 14 2013

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polarity
chemical analysis
grazing incidence
structural analysis
nitrides
reaction kinetics
x rays
reactivity
transmission electron microscopy
annealing
diffraction
metals
spectroscopy
interactions
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kragh-Buetow, K. C., Weng, X., Readinger, E. D., Wraback, M., & Mohney, S. E. (2013). Effect of polarity on Ni/InN interfacial reactions. Applied Physics Letters, 102(2), [021607]. https://doi.org/10.1063/1.4781768
Kragh-Buetow, K. C. ; Weng, X. ; Readinger, E. D. ; Wraback, M. ; Mohney, Suzanne E. / Effect of polarity on Ni/InN interfacial reactions. In: Applied Physics Letters. 2013 ; Vol. 102, No. 2.
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Kragh-Buetow, KC, Weng, X, Readinger, ED, Wraback, M & Mohney, SE 2013, 'Effect of polarity on Ni/InN interfacial reactions', Applied Physics Letters, vol. 102, no. 2, 021607. https://doi.org/10.1063/1.4781768

Effect of polarity on Ni/InN interfacial reactions. / Kragh-Buetow, K. C.; Weng, X.; Readinger, E. D.; Wraback, M.; Mohney, Suzanne E.

In: Applied Physics Letters, Vol. 102, No. 2, 021607, 14.01.2013.

Research output: Contribution to journalArticle

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AU - Kragh-Buetow, K. C.

AU - Weng, X.

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AB - Ni films on (0001) and (000 1 ̄) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

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Kragh-Buetow KC, Weng X, Readinger ED, Wraback M, Mohney SE. Effect of polarity on Ni/InN interfacial reactions. Applied Physics Letters. 2013 Jan 14;102(2). 021607. https://doi.org/10.1063/1.4781768