Effect of silicon substrate hydrogenation treatment on nickel suicide formation

A. Vengurlekar, Satheesh Balasubramanian, S. Ashok, D. Theodore, D. Z. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Nickel suicide is being considered as a replacement for the currently used class of suicides for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600°C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Pages123-126
Number of pages4
StatePublished - Aug 16 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: Mar 15 2004Mar 16 2004

Publication series

NameExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Volume4

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period3/15/043/16/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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