Effect of silicon substrate hydrogenation treatment on nickel suicide formation

A. Vengurlekar; Satheesh Balasubramanian; S. Ashok; D. Theodore; D. Z. Chi

Effect of silicon substrate hydrogenation treatment on nickel suicide formation

A. Vengurlekar, Satheesh Balasubramanian, S. Ashok, D. Theodore, D. Z. Chi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nickel suicide is being considered as a replacement for the currently used class of suicides for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600°C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.

Original language	English (US)
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Pages	123-126
Number of pages	4
State	Published - Aug 16 2004
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: Mar 15 2004 → Mar 16 2004

Publication series

Name	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Volume	4

Other

Other	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	3/15/04 → 3/16/04

All Science Journal Classification (ASJC) codes

Engineering(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Vengurlekar, A., Balasubramanian, S., Ashok, S., Theodore, D., & Chi, D. Z. (2004). Effect of silicon substrate hydrogenation treatment on nickel suicide formation. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (pp. 123-126). (Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004; Vol. 4).

Vengurlekar, A. ; Balasubramanian, Satheesh ; Ashok, S. et al. / Effect of silicon substrate hydrogenation treatment on nickel suicide formation. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. editor / X.P. Qu ; G.P. Ru ; B.Z. Li ; B. Mizuno ; H. Iwai. 2004. pp. 123-126 (Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004).

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title = "Effect of silicon substrate hydrogenation treatment on nickel suicide formation",

abstract = "Nickel suicide is being considered as a replacement for the currently used class of suicides for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600°C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.",

author = "A. Vengurlekar and Satheesh Balasubramanian and S. Ashok and D. Theodore and Chi, {D. Z.}",

year = "2004",

month = aug,

day = "16",

language = "English (US)",

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series = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

pages = "123--126",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Vengurlekar, A, Balasubramanian, S, Ashok, S, Theodore, D & Chi, DZ 2004, Effect of silicon substrate hydrogenation treatment on nickel suicide formation. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, vol. 4, pp. 123-126, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 3/15/04.

Effect of silicon substrate hydrogenation treatment on nickel suicide formation. / Vengurlekar, A.; Balasubramanian, Satheesh; Ashok, S. et al.
Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. 2004. p. 123-126 (Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004; Vol. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of silicon substrate hydrogenation treatment on nickel suicide formation

AU - Vengurlekar, A.

AU - Balasubramanian, Satheesh

AU - Ashok, S.

AU - Theodore, D.

AU - Chi, D. Z.

PY - 2004/8/16

Y1 - 2004/8/16

N2 - Nickel suicide is being considered as a replacement for the currently used class of suicides for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600°C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.

AB - Nickel suicide is being considered as a replacement for the currently used class of suicides for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600°C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.

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M3 - Conference contribution

AN - SCOPUS:3543078810

SN - 7309039157

SN - 9787309039153

T3 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

SP - 123

EP - 126

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

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T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Vengurlekar A, Balasubramanian S, Ashok S, Theodore D, Chi DZ. Effect of silicon substrate hydrogenation treatment on nickel suicide formation. In Qu XP, Ru GP, Li BZ, Mizuno B, Iwai H, editors, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. 2004. p. 123-126. (Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004).

Effect of silicon substrate hydrogenation treatment on nickel suicide formation

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