Effect of SrTiO3 buffer layers on crystallization and properties of sol-gel derived Pb(Zr0.52Ti0.48)O3 thin films

Hong Xin, Wei Ren, Xiaoqing Wu, Peng Shi, Wanlin Zhu, Xiaohua Zhang

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3 Scopus citations

Abstract

Ferroelectric PbZr0.52Ti0.48O3 (PZT) thin films were prepared by a sol-gel method using SrTiO3 (STO) buffer layers. The effect of SrTiO3 buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO3 buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO3 buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO3 buffer layers are investigated and discussed.

Original languageEnglish (US)
Pages (from-to)206-212
Number of pages7
JournalFerroelectrics
Volume406
Issue number1
DOIs
StatePublished - 2010
Event12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China
Duration: Aug 23 2009Aug 27 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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