Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

J. J. Wang, J. M. Hu, T. N. Yang, M. Feng, J. X. Zhang, L. Q. Chen, C. W. Nan

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.

Original languageEnglish (US)
Article number4553
JournalScientific reports
Volume4
DOIs
StatePublished - Apr 1 2014

All Science Journal Classification (ASJC) codes

  • General

Cite this

Wang, J. J. ; Hu, J. M. ; Yang, T. N. ; Feng, M. ; Zhang, J. X. ; Chen, L. Q. ; Nan, C. W. / Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures. In: Scientific reports. 2014 ; Vol. 4.
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Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures. / Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

In: Scientific reports, Vol. 4, 4553, 01.04.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

AU - Wang, J. J.

AU - Hu, J. M.

AU - Yang, T. N.

AU - Feng, M.

AU - Zhang, J. X.

AU - Chen, L. Q.

AU - Nan, C. W.

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AB - Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.

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