Effect of strain on voltage-controlled magnetism in BiFeO 3-based heterostructures

J. J. Wang, J. M. Hu, T. N. Yang, M. Feng, J. X. Zhang, L. Q. Chen, C. W. Nan

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Abstract

Voltage-modulated magnetism in magnetic/BiFeO 3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO 3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO 3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO 3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO 3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO 3-based heterostructures.

Original languageEnglish (US)
Article number4553
JournalScientific reports
Volume4
DOIs
StatePublished - Apr 1 2014

All Science Journal Classification (ASJC) codes

  • General

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