Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Michael R. Hontz, Rongming Chu, Raghav Khanna

Research output: Contribution to journalArticlepeer-review

Abstract

This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device. It is shown in simulation that ${C} _{\mathrm{ GD}}$ and ${C} _{\mathrm{ DS}}$ have a demonstrable dependence on substrate selection and is consistent with expectations regarding the substrate materials conductivity. The device model was then used in transient simulation where the choice of substrate was shown to noticeably affect the model's turn-on and turn-off energy.

Original languageEnglish (US)
Article number9040524
Pages (from-to)331-335
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
StatePublished - 2020

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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