Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by organometallic vapor phase epitaxy

David W. Snyder, S. Mahajan, E. I. Ko, P. J. Sides

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Abstract

The effect of substrate misorientation on surface morphology of CdTe homoepitaxial films deposited by organometallic vapor phase epitaxy was investigated by deposition onto a substrate polished in the shape of a spherical cap that exposed misorientations up to 15°from the [100] pole. Hillock formation was suppressed for misorientations between 2.5°and 4.5°from the [100] pole towards the nearest {111}Te planes, whereas tilt towards the nearest {111}Cd planes resulted in only a slight improvement in surface morphology. A commonly used direction for misorienting substrates, towards the nearest {110} planes, reduced the size and density of the hillocks but did not completely suppress their formation. Double-crystal x-ray rocking curves indicated that high crystalline quality was obtained near the (100) plane, and that misorientations towards the nearest {111}Te planes did not significantly degrade the quality. Arguments have been developed to rationalize these observations.

Original languageEnglish (US)
Pages (from-to)848-850
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number8
DOIs
StatePublished - Dec 1 1991

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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