Effect of substrate on the growth and properties of MoS 2 thin films grown by plasma-enhanced atomic layer deposition

Asad J. Mughal, Timothy N. Walter, Kayla A. Cooley, Adam Bertuch, Suzanne E. Mohney

Research output: Contribution to journalArticle

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Abstract

Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.

Original languageEnglish (US)
Article number010907
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume37
Issue number1
DOIs
StatePublished - Jan 1 2019

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Aluminum Oxide
Silicon
Plasmas
Sapphire
Thin films
sapphire
Substrates
thin films
molybdenum disulfides
Level control
silicon
Photoelectron spectroscopy
Silicon nitride
silicon nitrides
Oxides
x ray spectroscopy
Molybdenum
Raman spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.",
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Effect of substrate on the growth and properties of MoS 2 thin films grown by plasma-enhanced atomic layer deposition . / Mughal, Asad J.; Walter, Timothy N.; Cooley, Kayla A.; Bertuch, Adam; Mohney, Suzanne E.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 37, No. 1, 010907, 01.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Mughal, Asad J.

AU - Walter, Timothy N.

AU - Cooley, Kayla A.

AU - Bertuch, Adam

AU - Mohney, Suzanne E.

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AB - Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.

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