Plasma-enhanced atomic layer deposition was used to grow molybdenum disulfide films using ( t BuN) 2 (NMe 2 ) 2 Mo and a remote H 2 S-Ar plasma as coreactants on three different substrates: Thermal oxide on silicon, c-plane sapphire, and epitaxial c-plane GaN on sapphire. Depositions were carried out at 250 °C. The substrates' effect on the growth of MoS 2 was investigated through resonance Raman spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. In addition, transmission electron microscopy was performed on films deposited on electron-Transparent silicon nitride membranes. Films of 2H-MoS 2 were deposited with atomic-level control of thickness under the deposition conditions studied. By analyzing the resonance Raman spectrum, it was found that higher degrees of crystallinity could be achieved on GaN or Al 2 O 3 substrates compared to thermally oxidized silicon.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Jan 1 2019|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films