Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition

Azimkhan Kozhakhmetov, Tanushree Holme Choudhury, Zakaria Y. Al Balushi, Mikhail Chubarov, Joan Marie Redwing

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of substrate (c-plane sapphire versus epitaxial graphene/6H-SiC) on the CVD growth and properties of thin 3R NbS2 films was investigated using niobium (v) pentachloride (NbCl5) and hydrogen disulfide (H2S) as precursors in a hydrogen carrier gas. The growth temperature ranged from 400 °C to 800 °C and the sulfur to niobium ratio (S/Nb) ranged between 640 and 5100 under 100 Torr total pressure. Growth on sapphire resulted in fine grained nanocrystalline NbS2 films under all conditions studied whereas smooth NbS2 films with triangular-shaped domains, on the order of 1–2 μm in size, were obtained on epitaxial graphene under identical conditions. The differences in growth morphology were attributed to enhanced surface diffusion of Nb adatoms on the passivated graphene surface compared to that of c-plane sapphire. This work demonstrates that the substrate choice plays a very crucial role in the deposition of 3R NbS2.

Original languageEnglish (US)
Pages (from-to)137-141
Number of pages5
JournalJournal of Crystal Growth
Volume486
DOIs
StatePublished - Mar 15 2018

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Graphite
Aluminum Oxide
Niobium
Sapphire
Graphene
Chemical vapor deposition
vapor deposition
graphene
sapphire
Hydrogen
Substrates
niobium
Adatoms
Surface diffusion
Growth temperature
Sulfur
Disulfides
disulfides
hydrogen
surface diffusion

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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abstract = "The effect of substrate (c-plane sapphire versus epitaxial graphene/6H-SiC) on the CVD growth and properties of thin 3R NbS2 films was investigated using niobium (v) pentachloride (NbCl5) and hydrogen disulfide (H2S) as precursors in a hydrogen carrier gas. The growth temperature ranged from 400 °C to 800 °C and the sulfur to niobium ratio (S/Nb) ranged between 640 and 5100 under 100 Torr total pressure. Growth on sapphire resulted in fine grained nanocrystalline NbS2 films under all conditions studied whereas smooth NbS2 films with triangular-shaped domains, on the order of 1–2 μm in size, were obtained on epitaxial graphene under identical conditions. The differences in growth morphology were attributed to enhanced surface diffusion of Nb adatoms on the passivated graphene surface compared to that of c-plane sapphire. This work demonstrates that the substrate choice plays a very crucial role in the deposition of 3R NbS2.",
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Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition. / Kozhakhmetov, Azimkhan; Choudhury, Tanushree Holme; Al Balushi, Zakaria Y.; Chubarov, Mikhail; Redwing, Joan Marie.

In: Journal of Crystal Growth, Vol. 486, 15.03.2018, p. 137-141.

Research output: Contribution to journalArticle

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AU - Choudhury, Tanushree Holme

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AU - Chubarov, Mikhail

AU - Redwing, Joan Marie

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