Effect of the H2O/TEOS ratio upon the preparation and nitridation of silica sol/gel films

P. M. Glaser, Carlo G. Pantano

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Silica sol/gel thin films were deposited on silicon wafers by spinning solutions of varying H2O/TEOS ratio. It was found that the density of the initial microporous dried gel film increases with the H2O/TEOS ratio. Consequently, the amount of film shrinkage observed during thermal treatment in N2 or NH3 was decreased with increasing H2O/TEOS. This is contrary to the behavior of bulk gels derived from solutions of increasing H2O/TEOS ratio. Most significant, though, was the enhanced incorporation of nitrogen during ammonia treatment of the films prepared with solutions of increasing H2O/TEOS ratio. Moreover, there was some indication that the nitrided films obtained after the ammonia treatment may limit oxidation of the silicon wafer.

Original languageEnglish (US)
Pages (from-to)209-221
Number of pages13
JournalJournal of Non-Crystalline Solids
Volume63
Issue number1-2
DOIs
StatePublished - Jan 1 1984

Fingerprint

Nitridation
Silicon Dioxide
Sol-gels
Silica
gels
silicon dioxide
preparation
Silicon wafers
Ammonia
ammonia
Gels
wafers
silicon
shrinkage
metal spinning
indication
Nitrogen
Heat treatment
nitrogen
Thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{320e560bf6d8487596dcfa4b213895da,
title = "Effect of the H2O/TEOS ratio upon the preparation and nitridation of silica sol/gel films",
abstract = "Silica sol/gel thin films were deposited on silicon wafers by spinning solutions of varying H2O/TEOS ratio. It was found that the density of the initial microporous dried gel film increases with the H2O/TEOS ratio. Consequently, the amount of film shrinkage observed during thermal treatment in N2 or NH3 was decreased with increasing H2O/TEOS. This is contrary to the behavior of bulk gels derived from solutions of increasing H2O/TEOS ratio. Most significant, though, was the enhanced incorporation of nitrogen during ammonia treatment of the films prepared with solutions of increasing H2O/TEOS ratio. Moreover, there was some indication that the nitrided films obtained after the ammonia treatment may limit oxidation of the silicon wafer.",
author = "Glaser, {P. M.} and Pantano, {Carlo G.}",
year = "1984",
month = "1",
day = "1",
doi = "10.1016/0022-3093(84)90400-9",
language = "English (US)",
volume = "63",
pages = "209--221",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "1-2",

}

Effect of the H2O/TEOS ratio upon the preparation and nitridation of silica sol/gel films. / Glaser, P. M.; Pantano, Carlo G.

In: Journal of Non-Crystalline Solids, Vol. 63, No. 1-2, 01.01.1984, p. 209-221.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of the H2O/TEOS ratio upon the preparation and nitridation of silica sol/gel films

AU - Glaser, P. M.

AU - Pantano, Carlo G.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Silica sol/gel thin films were deposited on silicon wafers by spinning solutions of varying H2O/TEOS ratio. It was found that the density of the initial microporous dried gel film increases with the H2O/TEOS ratio. Consequently, the amount of film shrinkage observed during thermal treatment in N2 or NH3 was decreased with increasing H2O/TEOS. This is contrary to the behavior of bulk gels derived from solutions of increasing H2O/TEOS ratio. Most significant, though, was the enhanced incorporation of nitrogen during ammonia treatment of the films prepared with solutions of increasing H2O/TEOS ratio. Moreover, there was some indication that the nitrided films obtained after the ammonia treatment may limit oxidation of the silicon wafer.

AB - Silica sol/gel thin films were deposited on silicon wafers by spinning solutions of varying H2O/TEOS ratio. It was found that the density of the initial microporous dried gel film increases with the H2O/TEOS ratio. Consequently, the amount of film shrinkage observed during thermal treatment in N2 or NH3 was decreased with increasing H2O/TEOS. This is contrary to the behavior of bulk gels derived from solutions of increasing H2O/TEOS ratio. Most significant, though, was the enhanced incorporation of nitrogen during ammonia treatment of the films prepared with solutions of increasing H2O/TEOS ratio. Moreover, there was some indication that the nitrided films obtained after the ammonia treatment may limit oxidation of the silicon wafer.

UR - http://www.scopus.com/inward/record.url?scp=0020703331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020703331&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(84)90400-9

DO - 10.1016/0022-3093(84)90400-9

M3 - Article

VL - 63

SP - 209

EP - 221

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 1-2

ER -