TY - JOUR
T1 - Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures
AU - Wasala, Milinda
AU - Zhang, Jie
AU - Ghosh, Sujoy
AU - Muchharla, Baleeswaraiah
AU - Malecek, Rachel
AU - Mazumdar, Dipanjan
AU - Samassekou, Hassana
AU - Gaither-Ganim, Moses
AU - Morrison, Andrew
AU - Lopez, Nestor Perera
AU - Carozo, Victor
AU - Lin, Zhong
AU - Terrones, Mauricio
AU - Talapatra, Saikat
N1 - Funding Information:
This work is supported by the U.S. Army Research Office through a MURI Grant No. W911NF-11-1-0362. The X-ray reflectivity experiment shown was carried out in the Frederick Seitz Materials Research Laboratory Central Research Facilities, University of Illinois. D.M. would like to acknowledge Dr. Mauro Sardela for his help with X-ray measurements.
Publisher Copyright:
Copyright © Materials Research Society 2016.
PY - 2016/4/14
Y1 - 2016/4/14
N2 - Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.
AB - Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.
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U2 - 10.1557/jmr.2015.364
DO - 10.1557/jmr.2015.364
M3 - Article
AN - SCOPUS:84953338050
VL - 31
SP - 893
EP - 899
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 7
ER -