Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures

Milinda Wasala, Jie Zhang, Sujoy Ghosh, Baleeswaraiah Muchharla, Rachel Malecek, Dipanjan Mazumdar, Hassana Samassekou, Moses Gaither-Ganim, Andrew Morrison, Nestor Perera Lopez, Victor Carozo, Zhong Lin, Mauricio Terrones, Saikat Talapatra

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.

Original languageEnglish (US)
Pages (from-to)893-899
Number of pages7
JournalJournal of Materials Research
Volume31
Issue number7
DOIs
StatePublished - Apr 14 2016

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures'. Together they form a unique fingerprint.

Cite this