TY - JOUR
T1 - Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures
AU - Wasala, Milinda
AU - Zhang, Jie
AU - Ghosh, Sujoy
AU - Muchharla, Baleeswaraiah
AU - Malecek, Rachel
AU - Mazumdar, Dipanjan
AU - Samassekou, Hassana
AU - Gaither-Ganim, Moses
AU - Morrison, Andrew
AU - Lopez, Nestor Perera
AU - Carozo, Victor
AU - Lin, Zhong
AU - Terrones, Mauricio
AU - Talapatra, Saikat
PY - 2016/4/14
Y1 - 2016/4/14
N2 - Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.
AB - Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.
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U2 - 10.1557/jmr.2015.364
DO - 10.1557/jmr.2015.364
M3 - Article
AN - SCOPUS:84953338050
VL - 31
SP - 893
EP - 899
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 7
ER -