TY - JOUR
T1 - Effect of Zn doping on stability of ZnO varistors under high pulse-current stress
AU - Jiang, Shenglin
AU - Wang, Yaping
AU - Zhang, Xiaoshan
AU - Xu, Yuchun
AU - Liu, Pin
AU - Zeng, Yike
AU - Wang, Qing
AU - Zhang, Guangzu
N1 - Funding Information:
This work was supported by National Natural Science Foundation of China ( 61378076 ), Research Fund of the Doctoral Program of Higher Education of China ( 20110142120074 ), National Key Scientific Instrument and Equipment Development Projects of China ( 2013YQ160551 ) and Innovation Research Fund of Huazhong University of Science and Technology ( 2015TS047 ). The authors also wish to thank the Analytical and Testing Center of Huazhong University of Science and Technology.
Publisher Copyright:
© 2015 Elsevier Ltd and Techna Group S.r.l.
PY - 2015/11
Y1 - 2015/11
N2 - The electrical properties, especially the degradation behavior against pulse-current stress, of the ZnO-based varistors with different doping contents of Zn have been investigated. The results show that the breakdown field (E1mA/cm2 ) and the nonlinear coefficient (α) decreases with the increasing content of Zn due to the increase in the amount of the non-effective grain boundaries and the reduced barrier height. The doped Zn ions, acting as donors, enhance the electron concentration in grains and result in the decrease of the clamping voltage ratio (K) for the pulse-current. The varistors with 3.0 mol% doped Zn possess a K in the range from 2.11 to 2.41, and after applying a surge-current of 6000 A, the variation rate of the breakdown field (% ΔE1mA/cm2 ) is only −9.8%, almost three times smaller than that of the samples without Zn doping.
AB - The electrical properties, especially the degradation behavior against pulse-current stress, of the ZnO-based varistors with different doping contents of Zn have been investigated. The results show that the breakdown field (E1mA/cm2 ) and the nonlinear coefficient (α) decreases with the increasing content of Zn due to the increase in the amount of the non-effective grain boundaries and the reduced barrier height. The doped Zn ions, acting as donors, enhance the electron concentration in grains and result in the decrease of the clamping voltage ratio (K) for the pulse-current. The varistors with 3.0 mol% doped Zn possess a K in the range from 2.11 to 2.41, and after applying a surge-current of 6000 A, the variation rate of the breakdown field (% ΔE1mA/cm2 ) is only −9.8%, almost three times smaller than that of the samples without Zn doping.
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U2 - 10.1016/j.ceramint.2015.05.120
DO - 10.1016/j.ceramint.2015.05.120
M3 - Article
AN - SCOPUS:84930750176
VL - 41
SP - 11611
EP - 11617
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 9
ER -