Effective barrier heights of mixed phase contacts: Size effects

J. L. Freeouf, T. N. Jackson, S. E. Laux, J. M. Woodall

Research output: Contribution to journalArticlepeer-review

111 Scopus citations

Abstract

Computer simulations of mixed phase Schottky contacts have been performed to gain insight into the effects of lateral dimensions upon device behavior. As expected, lateral dimensions comparable to the Debye length of the semiconductor result in strong modification of the device characteristics that would result from independent, parallel diodes. We suggest that such effects can play a role in most experimentally obtained contacts. Current models of Schottky barrier formation typically invoke kinetics-limited chemical interactions at the metal-semiconductor interface; such effects are unlikely to be laterally uniform over macroscopic dimensions, and may well provide strong sensitivity to seemingly minor variations in preparation techniques used by different groups. We demonstrate that mixed phase contacts, with size effects, can affect ideality factors, and can also cause disagreement between C-V and I-V barrier heights.

Original languageEnglish (US)
Pages (from-to)634-636
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number7
DOIs
StatePublished - 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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