Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering