Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation

Saurabh Mookerjea, Ramakrishnan Krishnan, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticle

152 Scopus citations

Abstract

Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (CEFF) and drive current (IEFF) for delay (τf = 0.69 RswCEFF, where Rsw=VDD/2 IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where CEFF is approximately equal to the gate capacitance (Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.

Original languageEnglish (US)
Pages (from-to)2092-2098
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number9
DOIs
StatePublished - Aug 11 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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