Effects of 173mev xe ion irradiation on epitaxial yba2cu30 films

B. Roas, B. Hensel, S. Henke, G. Saemann-Ischenko, L. Schultz, S. Klaumunzer, B. Kabius, W. Watanabe, K. Urban

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Abstract

Epitaxially grown YBau302 films have been irradiated with 173 MeVl29 Xe ions. A nonlinear decrease of the critical superconducting transition temperature T, and an exponential increase of the resistivity p is observed. "he c-axis parameter is extended to about 12w with increasing Xe fluence and the twin boundaries disappear. The 1-2-3 phase is amorphized along the paths of the Xe ions within an area of 40 A in diameter. A defect-induced enhancement of the critical current density j, in magnetic fields B is observed after low fluencies only if the flux lines are aligned parallel to the amorphized ion traces.

Original languageEnglish (US)
Pages (from-to)669-674
Number of pages6
JournalEPL
Volume11
Issue number7
DOIs
StatePublished - Apr 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Roas, B., Hensel, B., Henke, S., Saemann-Ischenko, G., Schultz, L., Klaumunzer, S., Kabius, B., Watanabe, W., & Urban, K. (1990). Effects of 173mev xe ion irradiation on epitaxial yba2cu30 films. EPL, 11(7), 669-674. https://doi.org/10.1209/0295-5075/11/7/015