TY - JOUR
T1 - Effects of 173mev xe ion irradiation on epitaxial yba2cu30 films
AU - Roas, B.
AU - Hensel, B.
AU - Henke, S.
AU - Saemann-Ischenko, G.
AU - Schultz, L.
AU - Klaumunzer, S.
AU - Kabius, B.
AU - Watanabe, W.
AU - Urban, K.
PY - 1990/4/1
Y1 - 1990/4/1
N2 - Epitaxially grown YBau302 films have been irradiated with 173 MeVl29 Xe ions. A nonlinear decrease of the critical superconducting transition temperature T, and an exponential increase of the resistivity p is observed. "he c-axis parameter is extended to about 12w with increasing Xe fluence and the twin boundaries disappear. The 1-2-3 phase is amorphized along the paths of the Xe ions within an area of 40 A in diameter. A defect-induced enhancement of the critical current density j, in magnetic fields B is observed after low fluencies only if the flux lines are aligned parallel to the amorphized ion traces.
AB - Epitaxially grown YBau302 films have been irradiated with 173 MeVl29 Xe ions. A nonlinear decrease of the critical superconducting transition temperature T, and an exponential increase of the resistivity p is observed. "he c-axis parameter is extended to about 12w with increasing Xe fluence and the twin boundaries disappear. The 1-2-3 phase is amorphized along the paths of the Xe ions within an area of 40 A in diameter. A defect-induced enhancement of the critical current density j, in magnetic fields B is observed after low fluencies only if the flux lines are aligned parallel to the amorphized ion traces.
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U2 - 10.1209/0295-5075/11/7/015
DO - 10.1209/0295-5075/11/7/015
M3 - Article
AN - SCOPUS:84956219782
SN - 0295-5075
VL - 11
SP - 669
EP - 674
JO - Journal de Physique (Paris), Lettres
JF - Journal de Physique (Paris), Lettres
IS - 7
ER -