Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

S. J. Potashnik, K. C. Ku, S. H. Chun, J. J. Berry, N. Samarth, P. Schiffer

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Abstract

We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250°C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.

Original languageEnglish (US)
Pages (from-to)1495-1497
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number10
DOIs
StatePublished - Sep 3 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Potashnik, S. J., Ku, K. C., Chun, S. H., Berry, J. J., Samarth, N., & Schiffer, P. (2001). Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs. Applied Physics Letters, 79(10), 1495-1497. https://doi.org/10.1063/1.1398619