Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

I. C. Manning, X. Weng, M. A. Fanton, D. W. Snyder, J. M. Redwing

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Abstract

The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

Original languageEnglish (US)
Pages (from-to)1301-1306
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number8
DOIs
StatePublished - Apr 1 2010

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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