Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

I. C. Manning; X. Weng; M. A. Fanton; D. W. Snyder; J. M. Redwing

doi:10.1016/j.jcrysgro.2009.11.024

Effects of composition on dislocation microstructure and stress in Si-doped Al_xGa_1-xN

I. C. Manning, X. Weng, M. A. Fanton, D. W. Snyder, J. M. Redwing

Research output: Contribution to journal › Article

5 Scopus citations

Abstract

The stress evolution of Si-doped Al_xGa_1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

Original language	English (US)
Pages (from-to)	1301-1306
Number of pages	6
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.11.024
State	Published - Apr 1 2010

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All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Manning, I. C., Weng, X., Fanton, M. A., Snyder, D. W., & Redwing, J. M. (2010). Effects of composition on dislocation microstructure and stress in Si-doped Al_xGa_1-xN. Journal of Crystal Growth, 312(8), 1301-1306. https://doi.org/10.1016/j.jcrysgro.2009.11.024

@article{955ede7e655f4f18971d78faf6ca0e42,

title = "Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN",

abstract = "The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.",

author = "Manning, {I. C.} and X. Weng and Fanton, {M. A.} and Snyder, {D. W.} and Redwing, {J. M.}",

year = "2010",

month = apr

day = "1",

doi = "10.1016/j.jcrysgro.2009.11.024",

language = "English (US)",

volume = "312",

pages = "1301--1306",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

AU - Manning, I. C.

AU - Weng, X.

AU - Fanton, M. A.

AU - Snyder, D. W.

AU - Redwing, J. M.

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

AB - The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

UR - http://www.scopus.com/inward/record.url?scp=77949613606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949613606&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.11.024

DO - 10.1016/j.jcrysgro.2009.11.024

M3 - Article

AN - SCOPUS:77949613606

VL - 312

SP - 1301

EP - 1306

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 8

ER -

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10.1016/j.jcrysgro.2009.11.024