Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

I. C. Manning; X. Weng; M. A. Fanton; D. W. Snyder; J. M. Redwing

doi:10.1016/j.jcrysgro.2009.11.024

Effects of composition on dislocation microstructure and stress in Si-doped Al_xGa_1-xN

I. C. Manning, X. Weng, M. A. Fanton, D. W. Snyder, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The stress evolution of Si-doped Al_xGa_1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

Original language	English (US)
Pages (from-to)	1301-1306
Number of pages	6
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.11.024
State	Published - Apr 1 2010

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2009.11.024

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title = "Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN",

abstract = "The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.",

author = "Manning, {I. C.} and X. Weng and Fanton, {M. A.} and Snyder, {D. W.} and Redwing, {J. M.}",

note = "Funding Information: We would like to acknowledge the support of the National Science Foundation (DMR-0606451) and the Penn State Electro-Optics Center. ",

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T1 - Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

AU - Manning, I. C.

AU - Weng, X.

AU - Fanton, M. A.

AU - Snyder, D. W.

AU - Redwing, J. M.

N1 - Funding Information: We would like to acknowledge the support of the National Science Foundation (DMR-0606451) and the Penn State Electro-Optics Center.

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

AB - The stress evolution of Si-doped AlxGa1-xN epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination.

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Effects of composition on dislocation microstructure and stress in Si-doped Al_xGa_1-xN

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