Effects of deposition parameters on crystallization of PECVD amorphous silicon films

Yaozu Wang, Reece Kingi, Osama O. Awadelkarim, Stephen J. Fonash

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

Plasma-enhanced chemical vapor deposition was used to deposit a-Si:H thin films (approx. 1000 angstrom) at various temperatures below 300°C on Corning 7059 glass substrates using a silane-based plasma. These films were used as precursor materials to produce solid phase crystallized polycrystalline silicon (poly-Si) by conventional furnace annealing at 600°C in N2 ambient. The precursor a-Si and final poly-Si films were examined using spectroscopic ellipsometry and transmission electron microscopy. Precursor film deposition temperatures were found to affect the void density in the a-Si film and grain size in the resulting poly-Si film with lower deposition temperatures leading to higher void density in the a-Si film and larger grain size in the poly-Si film.

Original languageEnglish (US)
Pages (from-to)373-378
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume403
StatePublished - Dec 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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