Effects of deposition parameters on crystallization of PECVD amorphous silicon films

Yaozu Wang, Reece Kingi, Osama O. Awadelkarim, Stephen J. Fonash

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Plasma-enhanced chemical vapor deposition was used to deposit a-Si:H thin films (approx. 1000 angstrom) at various temperatures below 300°C on Corning 7059 glass substrates using a silane-based plasma. These films were used as precursor materials to produce solid phase crystallized polycrystalline silicon (poly-Si) by conventional furnace annealing at 600°C in N2 ambient. The precursor a-Si and final poly-Si films were examined using spectroscopic ellipsometry and transmission electron microscopy. Precursor film deposition temperatures were found to affect the void density in the a-Si film and grain size in the resulting poly-Si film with lower deposition temperatures leading to higher void density in the a-Si film and larger grain size in the poly-Si film.

Original languageEnglish (US)
Pages (from-to)373-378
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume403
StatePublished - Dec 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Fingerprint

Plasma enhanced chemical vapor deposition
Crystallization
silicon films
Amorphous silicon
amorphous silicon
crystallization
Polysilicon
voids
grain size
silanes
ellipsometry
furnaces
temperature
solid phases
Silanes
deposits
vapor deposition
Spectroscopic ellipsometry
transmission electron microscopy
annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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Effects of deposition parameters on crystallization of PECVD amorphous silicon films. / Wang, Yaozu; Kingi, Reece; Awadelkarim, Osama O.; Fonash, Stephen J.

In: Materials Research Society Symposium - Proceedings, Vol. 403, 01.12.1996, p. 373-378.

Research output: Contribution to journalConference article

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