Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

A. Henry, O. O. Awadelkarim, J. L. Lindström, G. S. Oehrlein

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed.

Original languageEnglish (US)
Pages (from-to)147-151
Number of pages5
JournalMaterials Science and Engineering B
Volume4
Issue number1-4
DOIs
StatePublished - Oct 1989

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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