Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment

A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, S Ashok

Research output: Contribution to journalArticle

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Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural transformation of a-SiC:H has been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450 °C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with an increase of carbon-related paramagnetic defect states, shown to be the primary nonradiative recombination centers.

Original languageEnglish (US)
Article number113520
JournalJournal of Applied Physics
Volume99
Issue number11
DOIs
StatePublished - Jun 1 2006

Fingerprint

hydrogen bonds
photoluminescence
vacuum
defects
annealing
carbon
silicon carbides
luminous intensity
passivity
amorphous silicon
light emission
magnetron sputtering
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Vasin, A. V., Kolesnik, S. P., Konchits, A. A., Kushnirenko, V. I., Lysenko, V. S., Nazarov, A. N., ... Ashok, S. (2006). Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment. Journal of Applied Physics, 99(11), [113520]. https://doi.org/10.1063/1.2198935
Vasin, A. V. ; Kolesnik, S. P. ; Konchits, A. A. ; Kushnirenko, V. I. ; Lysenko, V. S. ; Nazarov, A. N. ; Rusavsky, A. V. ; Ashok, S. / Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment. In: Journal of Applied Physics. 2006 ; Vol. 99, No. 11.
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Vasin, AV, Kolesnik, SP, Konchits, AA, Kushnirenko, VI, Lysenko, VS, Nazarov, AN, Rusavsky, AV & Ashok, S 2006, 'Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment', Journal of Applied Physics, vol. 99, no. 11, 113520. https://doi.org/10.1063/1.2198935

Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment. / Vasin, A. V.; Kolesnik, S. P.; Konchits, A. A.; Kushnirenko, V. I.; Lysenko, V. S.; Nazarov, A. N.; Rusavsky, A. V.; Ashok, S.

In: Journal of Applied Physics, Vol. 99, No. 11, 113520, 01.06.2006.

Research output: Contribution to journalArticle

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T1 - Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment

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AU - Kolesnik, S. P.

AU - Konchits, A. A.

AU - Kushnirenko, V. I.

AU - Lysenko, V. S.

AU - Nazarov, A. N.

AU - Rusavsky, A. V.

AU - Ashok, S

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N2 - Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural transformation of a-SiC:H has been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450 °C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with an increase of carbon-related paramagnetic defect states, shown to be the primary nonradiative recombination centers.

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Vasin AV, Kolesnik SP, Konchits AA, Kushnirenko VI, Lysenko VS, Nazarov AN et al. Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment. Journal of Applied Physics. 2006 Jun 1;99(11). 113520. https://doi.org/10.1063/1.2198935