The effects of measurement frequency and illumination on spin-dependent trapping at trivalent silicon centers in a silicon grain boundary have been studied. Measurement frequency effects are quantitatively understood in terms of an electronic relaxation time for the traps. Illumination results suggest that most of the trivalent silicon centers in the grain boundary are in a negatively charged, diamagnetic state.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics