Effects of light and modulation frequency on spin-dependent trapping at silicon grain boundaries

Patrick M. Lenahan, W. K. Schubert

Research output: Contribution to journalArticle

22 Scopus citations


The effects of measurement frequency and illumination on spin-dependent trapping at trivalent silicon centers in a silicon grain boundary have been studied. Measurement frequency effects are quantitatively understood in terms of an electronic relaxation time for the traps. Illumination results suggest that most of the trivalent silicon centers in the grain boundary are in a negatively charged, diamagnetic state.

Original languageEnglish (US)
Pages (from-to)1544-1546
Number of pages3
JournalPhysical Review B
Issue number3
StatePublished - Jan 1 1984


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this