Effects of low-temperature surface cleaning using ECR hydrogen plasma

C. W. Nam, S. Ashok, W. Tsai, M. E. Day

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

ECR hydrogen plasma has been studied for removal of the native oxide and for in situ surface cleaning of Si. The process induced changes on electrical properties were inspected with Schottky diode and MOS capacitor structures. Current-Voltage (I-V) measurement of the Schottky diodes showed only a moderate change (about a decade) of the reverse saturation current after the plasma exposure. The deep level majority carrier traps induced by the treatment were measured by Deep Level Transient Spectroscopy (DLTS), and were found to have activation energies of 0.40 eV in the n-type samples and 0.54 eV in the p-type samples. As the plasma exposure time increased, the defect concentration increased and a broad shoulder appeared on the low temperature side. The extent of hydrogen permeation into the silicon was inspected by Capacitance-Voltage (C-V) measurement. Bias-temperature stress measurements of the p-Si Schottky samples reveal redistribution of hydrogen. Polysilicon gate-oxide-silicon samples subject to the hydrogen plasma exposure exhibit negligible change of the interface state density and flatband voltage.

Original languageEnglish (US)
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages279-284
Number of pages6
ISBN (Print)1558992138
StatePublished - Dec 1 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 13 1993Apr 15 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/13/934/15/93

Fingerprint

Surface cleaning
hydrogen plasma
cleaning
Hydrogen
Plasmas
Schottky diodes
Diodes
MOS capacitors
Temperature
Deep level transient spectroscopy
majority carriers
Capacitance measurement
stress measurement
Interface states
Stress measurement
Voltage measurement
Silicon oxides
Electric potential
electric potential
Silicon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nam, C. W., Ashok, S., Tsai, W., & Day, M. E. (1993). Effects of low-temperature surface cleaning using ECR hydrogen plasma. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 279-284). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.
Nam, C. W. ; Ashok, S. ; Tsai, W. ; Day, M. E. / Effects of low-temperature surface cleaning using ECR hydrogen plasma. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Publ by Materials Research Society, 1993. pp. 279-284 (Materials Research Society Symposium Proceedings).
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Nam, CW, Ashok, S, Tsai, W & Day, ME 1993, Effects of low-temperature surface cleaning using ECR hydrogen plasma. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, Publ by Materials Research Society, pp. 279-284, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 4/13/93.

Effects of low-temperature surface cleaning using ECR hydrogen plasma. / Nam, C. W.; Ashok, S.; Tsai, W.; Day, M. E.

Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Publ by Materials Research Society, 1993. p. 279-284 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - ECR hydrogen plasma has been studied for removal of the native oxide and for in situ surface cleaning of Si. The process induced changes on electrical properties were inspected with Schottky diode and MOS capacitor structures. Current-Voltage (I-V) measurement of the Schottky diodes showed only a moderate change (about a decade) of the reverse saturation current after the plasma exposure. The deep level majority carrier traps induced by the treatment were measured by Deep Level Transient Spectroscopy (DLTS), and were found to have activation energies of 0.40 eV in the n-type samples and 0.54 eV in the p-type samples. As the plasma exposure time increased, the defect concentration increased and a broad shoulder appeared on the low temperature side. The extent of hydrogen permeation into the silicon was inspected by Capacitance-Voltage (C-V) measurement. Bias-temperature stress measurements of the p-Si Schottky samples reveal redistribution of hydrogen. Polysilicon gate-oxide-silicon samples subject to the hydrogen plasma exposure exhibit negligible change of the interface state density and flatband voltage.

AB - ECR hydrogen plasma has been studied for removal of the native oxide and for in situ surface cleaning of Si. The process induced changes on electrical properties were inspected with Schottky diode and MOS capacitor structures. Current-Voltage (I-V) measurement of the Schottky diodes showed only a moderate change (about a decade) of the reverse saturation current after the plasma exposure. The deep level majority carrier traps induced by the treatment were measured by Deep Level Transient Spectroscopy (DLTS), and were found to have activation energies of 0.40 eV in the n-type samples and 0.54 eV in the p-type samples. As the plasma exposure time increased, the defect concentration increased and a broad shoulder appeared on the low temperature side. The extent of hydrogen permeation into the silicon was inspected by Capacitance-Voltage (C-V) measurement. Bias-temperature stress measurements of the p-Si Schottky samples reveal redistribution of hydrogen. Polysilicon gate-oxide-silicon samples subject to the hydrogen plasma exposure exhibit negligible change of the interface state density and flatband voltage.

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Nam CW, Ashok S, Tsai W, Day ME. Effects of low-temperature surface cleaning using ECR hydrogen plasma. In Higashi GS, Irene EA, Ohmi T, editors, Surface Chemical Cleaning and Passivation for Semiconductor Processing. Publ by Materials Research Society. 1993. p. 279-284. (Materials Research Society Symposium Proceedings).