Abstract
The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.
| Original language | English (US) |
|---|---|
| Article number | 184501 |
| Journal | Journal of Applied Physics |
| Volume | 124 |
| Issue number | 18 |
| DOIs | |
| State | Published - Nov 14 2018 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors : Super-hyperfine interactions and near interface silicon vacancy energy levels. / Anders, Mark A.; Lenahan, Patrick M.; Edwards, Arthur H.; Schultz, Peter A.; Van Ginhoven, Renee M.
In: Journal of Applied Physics, Vol. 124, No. 18, 184501, 14.11.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors
T2 - Super-hyperfine interactions and near interface silicon vacancy energy levels
AU - Anders, Mark A.
AU - Lenahan, Patrick M.
AU - Edwards, Arthur H.
AU - Schultz, Peter A.
AU - Van Ginhoven, Renee M.
PY - 2018/11/14
Y1 - 2018/11/14
N2 - The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.
AB - The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.
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U2 - 10.1063/1.5045668
DO - 10.1063/1.5045668
M3 - Article
AN - SCOPUS:85056603741
VL - 124
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 18
M1 - 184501
ER -