@article{ed8d3a14777f468ba2ec6d122d50b302,
title = "Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels",
abstract = "The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.",
author = "Anders, {Mark A.} and Lenahan, {Patrick M.} and Edwards, {Arthur H.} and Schultz, {Peter A.} and {Van Ginhoven}, {Renee M.}",
note = "Funding Information: AFRL gratefully acknowledges the support of the Air Force Office of Scientific Research (AFOSR) through Contract No. FA9550-17RVCOR505. This work was supported in part by a grant of computer time from the DoD High Performance Computing Modernization Program at the Air Force Research Laboratory and from the U.S. Army Engineer Research and Development Center. Work at Penn State was supported in part by AFOSR under Grant No. FA 9550-17-1-0242 and in part by the U.S. Army Research Laboratory, Adelphi, MD. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy, U.S. Department of Commerce, or the United States Government. A.H.E. thanks Dr. Andrew C. Pineda and Dr. Danhong Huang for helpful questions and discussions. M.A.A. and P.M.L. thank Dr. Aivars J. Lelis of the U.S. Army Research Laboratory, Adelphi, MD, for helpful discussions. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = nov,
day = "14",
doi = "10.1063/1.5045668",
language = "English (US)",
volume = "124",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "18",
}