Effects of oxygen pressure on characteristics of 0.05Pb(Al 0.5Nb0.5)O3-0.95Pb(Zr0.52Ti 0.48)O3thin films grown on alumina substrates by pulsed laser deposition

Min-Gyu Kang, Kwang Hwan Cho, Woo Suk Jung, Bong Hee Cho, Chong Yun Kang, Sahn Nahm, Seok Jin Yoon

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.

Original languageEnglish (US)
Pages (from-to)68-73
Number of pages6
JournalSensors and Actuators, A: Physical
Volume200
DOIs
StatePublished - Jan 1 2013

Fingerprint

Aluminum Oxide
Pulsed laser deposition
pulsed laser deposition
Alumina
aluminum oxides
Oxygen
polyacrylonitrile
oxygen
Substrates
Ferroelectric materials
Microscopes
microscopes
Thin films
Pressure control
thin films
Actuators
actuators
Polarization
sensors
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

Kang, Min-Gyu ; Cho, Kwang Hwan ; Jung, Woo Suk ; Cho, Bong Hee ; Kang, Chong Yun ; Nahm, Sahn ; Yoon, Seok Jin. / Effects of oxygen pressure on characteristics of 0.05Pb(Al 0.5Nb0.5)O3-0.95Pb(Zr0.52Ti 0.48)O3thin films grown on alumina substrates by pulsed laser deposition. In: Sensors and Actuators, A: Physical. 2013 ; Vol. 200. pp. 68-73.
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abstract = "Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.",
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Effects of oxygen pressure on characteristics of 0.05Pb(Al 0.5Nb0.5)O3-0.95Pb(Zr0.52Ti 0.48)O3thin films grown on alumina substrates by pulsed laser deposition. / Kang, Min-Gyu; Cho, Kwang Hwan; Jung, Woo Suk; Cho, Bong Hee; Kang, Chong Yun; Nahm, Sahn; Yoon, Seok Jin.

In: Sensors and Actuators, A: Physical, Vol. 200, 01.01.2013, p. 68-73.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kang, Min-Gyu

AU - Cho, Kwang Hwan

AU - Jung, Woo Suk

AU - Cho, Bong Hee

AU - Kang, Chong Yun

AU - Nahm, Sahn

AU - Yoon, Seok Jin

PY - 2013/1/1

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N2 - Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.

AB - Binary system of 0.05Pb(Al0.5Nb0.5)O 3-0.95Pb(Zr0.52Ti0.48)O3(PAN-PZT) thin films were deposited on alumina substrates by a pulsed laser deposition method and we investigated effects of oxygen pressure on ferroelectric domain structure and the piezoelectric characteristics of the films by piezoelectric force microscope (PFM). The films in optimum oxygen pressure exhibited the remnant polarization of 58.4 and 24.4 μC/cm2, and 180° and 90° domain switching behavior were observed from PFM analysis. We obtained a large effective piezoelectric constant (d33) value (∼110 pm/V) in the films. As a result, we can determine the ferroelectric domain structure and improve the piezoelectric properties of the PAN-PZT films using an oxygen pressure control during the process and it helps to obtain suitable piezoelectric thin films for sensors and actuators applications.

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