Effects of Preoxidation Ambient in Very Thin Thermal Oxide on Silicon

Jerzy Ruzyllo

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The impact of the gas ambient used during the preoxidation warm-up of silicon wafers on the very thin oxide growth process and oxide dielectric strength is studied. It is shown that a 10 min warm-up in N2 results in higher initial growth rate and decreased oxide dielectric strength as compared to the warm-up carried in Ar. These effects depend on temperature of oxidation and are more significant at 1100° than 900°C. Also, it is shown that the addition of 1% H2to the Ar used as a warm-up ambient results in an increased oxidation rate and higher dielectric strength of very thin oxides due to water vapor formation inside the oxidation chamber during the replacement of Ar + 1% H2 Fmixture with 02.

Original languageEnglish (US)
Pages (from-to)1677-1682
Number of pages6
JournalJournal of the Electrochemical Society
Volume133
Issue number8
DOIs
StatePublished - Aug 1986

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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