Effects of Preoxidation Ambient in Very Thin Thermal Oxide on Silicon

Jerzy Ruzyllo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The impact of the gas ambient used during the preoxidation warm-up of silicon wafers on the very thin oxide growth process and oxide dielectric strength is studied. It is shown that a 10 min warm-up in N2 results in higher initial growth rate and decreased oxide dielectric strength as compared to the warm-up carried in Ar. These effects depend on temperature of oxidation and are more significant at 1100° than 900°C. Also, it is shown that the addition of 1% H2to the Ar used as a warm-up ambient results in an increased oxidation rate and higher dielectric strength of very thin oxides due to water vapor formation inside the oxidation chamber during the replacement of Ar + 1% H2 Fmixture with 02.

Original languageEnglish (US)
Pages (from-to)1677-1682
Number of pages6
JournalJournal of the Electrochemical Society
Volume133
Issue number8
DOIs
StatePublished - Jan 1 1986

Fingerprint

Silicon
Oxides
oxides
silicon
Oxidation
oxidation
Steam
Silicon wafers
Water vapor
water vapor
chambers
Gases
wafers
Hot Temperature
gases
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{38da3ec4d426483cb5aeb7d07b8adc8d,
title = "Effects of Preoxidation Ambient in Very Thin Thermal Oxide on Silicon",
abstract = "The impact of the gas ambient used during the preoxidation warm-up of silicon wafers on the very thin oxide growth process and oxide dielectric strength is studied. It is shown that a 10 min warm-up in N2 results in higher initial growth rate and decreased oxide dielectric strength as compared to the warm-up carried in Ar. These effects depend on temperature of oxidation and are more significant at 1100° than 900°C. Also, it is shown that the addition of 1{\%} H2to the Ar used as a warm-up ambient results in an increased oxidation rate and higher dielectric strength of very thin oxides due to water vapor formation inside the oxidation chamber during the replacement of Ar + 1{\%} H2 Fmixture with 02.",
author = "Jerzy Ruzyllo",
year = "1986",
month = "1",
day = "1",
doi = "10.1149/1.2108992",
language = "English (US)",
volume = "133",
pages = "1677--1682",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

Effects of Preoxidation Ambient in Very Thin Thermal Oxide on Silicon. / Ruzyllo, Jerzy.

In: Journal of the Electrochemical Society, Vol. 133, No. 8, 01.01.1986, p. 1677-1682.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of Preoxidation Ambient in Very Thin Thermal Oxide on Silicon

AU - Ruzyllo, Jerzy

PY - 1986/1/1

Y1 - 1986/1/1

N2 - The impact of the gas ambient used during the preoxidation warm-up of silicon wafers on the very thin oxide growth process and oxide dielectric strength is studied. It is shown that a 10 min warm-up in N2 results in higher initial growth rate and decreased oxide dielectric strength as compared to the warm-up carried in Ar. These effects depend on temperature of oxidation and are more significant at 1100° than 900°C. Also, it is shown that the addition of 1% H2to the Ar used as a warm-up ambient results in an increased oxidation rate and higher dielectric strength of very thin oxides due to water vapor formation inside the oxidation chamber during the replacement of Ar + 1% H2 Fmixture with 02.

AB - The impact of the gas ambient used during the preoxidation warm-up of silicon wafers on the very thin oxide growth process and oxide dielectric strength is studied. It is shown that a 10 min warm-up in N2 results in higher initial growth rate and decreased oxide dielectric strength as compared to the warm-up carried in Ar. These effects depend on temperature of oxidation and are more significant at 1100° than 900°C. Also, it is shown that the addition of 1% H2to the Ar used as a warm-up ambient results in an increased oxidation rate and higher dielectric strength of very thin oxides due to water vapor formation inside the oxidation chamber during the replacement of Ar + 1% H2 Fmixture with 02.

UR - http://www.scopus.com/inward/record.url?scp=0022766227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022766227&partnerID=8YFLogxK

U2 - 10.1149/1.2108992

DO - 10.1149/1.2108992

M3 - Article

VL - 133

SP - 1677

EP - 1682

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -