Effects of strain on the electrical properties of silicon carbide

Fiona M. Steel, Blair R. Tuttle, Xiao Shen, Sokrates T. Pantelides

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We use density functional calculations to elucidate the effects of strain on the electronic properties of 4H-SiC. Both compressive and tensile uniaxial strain result in a smaller energy gap and splitting of the conduction band valleys. Compared to compressive strain, tensile strain results in larger valley splitting and larger changes to the electron effective masses. For strain larger than 1.5%, in one hexagonal direction, the important conductivity mass can be reduced by more than 50%. For biaxial tensile strain, we also observe effective mass changes similar to the uniaxial results.

Original languageEnglish (US)
Article number013702
JournalJournal of Applied Physics
Volume114
Issue number1
DOIs
StatePublished - Jul 7 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effects of strain on the electrical properties of silicon carbide'. Together they form a unique fingerprint.

Cite this