Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Joshua A. Robinson, Kathleen A. Trumbull, Michael Labella, Randall Cavalero, Matthew J. Hollander, Michael Zhu, Maxwell T. Wetherington, Mark Fanton, David W. Snyder

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20 Scopus citations

Abstract

We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to increase with wafer misorientation from SiC(0001). This results in a monotonic increase in average graphene thickness, as well as a 30% increase in carrier density and 40% decrease in mobility up to 0.45° miscut toward (1 1- 00). Beyond 0.45°, average thickness and carrier density continues to increase; however, carrier mobility is similar to low-miscut angles, suggesting that the interaction between graphene and SiC(0001) may be fundamentally different that of graphene/SiC (1 1- 0n).

Original languageEnglish (US)
Article number222109
JournalApplied Physics Letters
Volume98
Issue number22
DOIs
StatePublished - May 30 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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