Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors

Min Gyu Kang; Kwang Hwan Cho; Sahn Nahm; Seok Jin Yoon; Chong Yun Kang

doi:10.1016/j.scriptamat.2014.01.015

Effects of vanadium substitution on the electrical performance of amorphous SrBi₂Ta₂O₉ thin-film capacitors

Min Gyu Kang, Kwang Hwan Cho, Sahn Nahm, Seok Jin Yoon, Chong Yun Kang

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of vanadium substitution on the dielectric properties of amorphous SrBi₂Ta₂O₉ (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V³⁺ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm^-2 and 0.62 μA cm^-2 at 1 V, respectively.

Original language	English (US)
Pages (from-to)	45-48
Number of pages	4
Journal	Scripta Materialia
Volume	77
DOIs	https://doi.org/10.1016/j.scriptamat.2014.01.015
State	Published - Apr 15 2014

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2014.01.015

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@article{86992af403844772a19cf2b85d1c7d63,

title = "Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors",

abstract = "The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.",

author = "Kang, {Min Gyu} and Cho, {Kwang Hwan} and Sahn Nahm and Yoon, {Seok Jin} and Kang, {Chong Yun}",

note = "Funding Information: This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and by the KIST Institutional Program (Project Nos. 2E24070 and 2E24001).",

year = "2014",

month = apr,

day = "15",

doi = "10.1016/j.scriptamat.2014.01.015",

language = "English (US)",

volume = "77",

pages = "45--48",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Effects of vanadium substitution on the electrical performance of amorphous SrBi2Ta2O9 thin-film capacitors

AU - Kang, Min Gyu

AU - Cho, Kwang Hwan

AU - Nahm, Sahn

AU - Yoon, Seok Jin

AU - Kang, Chong Yun

N1 - Funding Information: This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and by the KIST Institutional Program (Project Nos. 2E24070 and 2E24001).

PY - 2014/4/15

Y1 - 2014/4/15

N2 - The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.

AB - The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cm-2 and 0.62 μA cm-2 at 1 V, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84896730296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896730296&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2014.01.015

DO - 10.1016/j.scriptamat.2014.01.015

M3 - Article

AN - SCOPUS:84896730296

SN - 1359-6462

VL - 77

SP - 45

EP - 48

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Effects of vanadium substitution on the electrical performance of amorphous SrBi₂Ta₂O₉ thin-film capacitors

Abstract

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