Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by bridgman method

Jun Luo, Wesley Hackenberger, Shujun Zhang, Tom R. Shrout

Research output: Contribution to journalConference article

30 Scopus citations

Abstract

PIN-PMN-PT (Pb(In1/2Nb1/2)O3-Pb(Mg 1/3Nb2/3)O3-3) single crystals with 26%-59% PIN were successfully by Bridgman technique. Elastic, dielectric and properties of ternary PIN-PMN-PT crystals were in comparison with PMN-PT (Pb(Mg 1/3Nb2/3)O3 -3) crystals. It was demonstrated that PIN-PMN-PT possess as excellent piezoelectric properties as PMNPT , but can be operated at elevated temperature and electric field without the depoling issue. TRT of PIN-PMNPT with 26%-36% PIN were roughly in the range of 115 -135°C, 30-40°C higher than that of PMN-PT crystals;, EC were on the order of 4.5-5.6kV/cm, two to three higher than that of PMN-PT crystals. A full set of or derived elastic, piezoelectric and dielectric of PIN-PMN-PT crystals are present in this paper.

Original languageEnglish (US)
Article number4803381
Pages (from-to)261-264
Number of pages4
JournalProceedings - IEEE Ultrasonics Symposium
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China
Duration: Nov 2 2008Nov 5 2008

All Science Journal Classification (ASJC) codes

  • Acoustics and Ultrasonics

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