TY - JOUR
T1 - Electric conduction of thin-layer Ni-multilayer ceramic capacitors with core-shell structure BaTiO3
AU - Morita, Koichiro
AU - Mizuno, Youichi
AU - Chazono, Hirokazu
AU - Kishi, Hiroshi
AU - Yang, Gai Ying
AU - Liu, Wei En
AU - Dickey, Elizabeth C.
AU - Randall, Clive A.
PY - 2007/5/8
Y1 - 2007/5/8
N2 - The electric conduction mechanism for multilayer ceramic capacitors with Ni internal electrodes (Ni-MLCCs) was investigated, utilizing impedance spectroscopy (IS) and thermally stimulated current (TSC) measurement techniques. A modified 4RC equivalent circuit model was proposed to analyze the IS data for the Ni-MLCCs. This model revealed that electrode/ceramics interfaces (E/C-I) and grain boundaries (GBs) have a Schottky type conduction mechanism controlling the leakage behavior at low electric field. The Schottky barrier height at E/C-I and surface level height at GB were calculated being 1.43 and 1.06 eV, respectively. The Ni-MLCCs showed a tunneling conduction occurs with high dc electric fields of more than 10 V/μm. The onset electric field for the tunneling conduction shifted toward high electric fields as the Mn content of the capacitors increased. TSC measurements revealed that a low Mn content resulted in high mobile oxygen vacancies concentration in the Ni-MLCCs. Mn also played a role in preventing oxygen vacancies from migrating to cathode electrodes, which resulted in a long lifetime for the Ni-MLCCs.
AB - The electric conduction mechanism for multilayer ceramic capacitors with Ni internal electrodes (Ni-MLCCs) was investigated, utilizing impedance spectroscopy (IS) and thermally stimulated current (TSC) measurement techniques. A modified 4RC equivalent circuit model was proposed to analyze the IS data for the Ni-MLCCs. This model revealed that electrode/ceramics interfaces (E/C-I) and grain boundaries (GBs) have a Schottky type conduction mechanism controlling the leakage behavior at low electric field. The Schottky barrier height at E/C-I and surface level height at GB were calculated being 1.43 and 1.06 eV, respectively. The Ni-MLCCs showed a tunneling conduction occurs with high dc electric fields of more than 10 V/μm. The onset electric field for the tunneling conduction shifted toward high electric fields as the Mn content of the capacitors increased. TSC measurements revealed that a low Mn content resulted in high mobile oxygen vacancies concentration in the Ni-MLCCs. Mn also played a role in preventing oxygen vacancies from migrating to cathode electrodes, which resulted in a long lifetime for the Ni-MLCCs.
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U2 - 10.1143/JJAP.46.2984
DO - 10.1143/JJAP.46.2984
M3 - Article
AN - SCOPUS:34547907864
SN - 0021-4922
VL - 46
SP - 2984
EP - 2990
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 A
ER -