Electric field effect in high Tc superconducting ultrathin YBa2Cu3O7-x films

X. X. Xi, Q. Li, C. Doughty, C. Kwon, S. Bhattacharya, A. T. Findikoglu, T. Venkatesan

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Abstract

A multilayer high Tc superconducting field-effect transistor-like structure was made from ultrathin YBa2Cu 3O7-x films. An epitaxially grown dielectric SrTiO 3 insulation layer, which had a forward bias breakdown voltage of about 20 V, allowed an electric field induced change in the channel layer of 1.25×1013 carrier/cm2 per volt of the gate voltage. A significant modulation of the normal state and superconducting properties was observed in samples with YBa2Cu3O7-x channel layers of a few unit cells thick. By applying gate voltage of different polarities, Tc was both suppressed and enhanced by ∼1 K. The resistance was modulated by as much as 20% in the normal state and by over 1500% near the zero resistance temperature.

Original languageEnglish (US)
Pages (from-to)3470-3472
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number26
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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